EBeam Lithographer

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  "date": "2026-03-02T00:00:00Z",
  "description": "(SC Ref:825231)",
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    "description": "The University has a requirement for an Electron Beam lithography system which has an acceleration voltage of at least 200 kV. It must be capable of the following:\r\n a) Ultra-fine line lithography: 3 nm linewidth, using commercially available resists. This can be obtained by its single-nm digit beam diameter.\r\n b) Ultra-high position accuracy: This can be obtained by a laser interferometer with \u00c3\u0085 (sub-1 nm) reading resolution, enabling a stitching accuracy of \u00c2\u00b18 nm and overlay accuracy of \u00c2\u00b18 nm.\r\n c) Uniform fine pattern writing over entire field: Uniform nm-scale lines can be drawn from edge to edge across a large field (\u00e2\u0089\u00a52000\u00ce\u00bcm) without the need for stitching. This guarantees better accuracy, eliminates the need for stage movement, and enhances writing speed and throughput.\r\n d) High throughput lithography: This will be enabled by a 125 MHz (or higher) high-speed deflection system coupled with a new electron beam column design.\r\n e) Wafer scale (\u0026 multi wafer) processing: Single cassette auto-loader supporting 8-inch wafers with a multi-cassette automatic sample loading system. Fast loading and pumping time.\r\n f) Flexibility in sample holders: Offer the ability to simultaneously handle a variety of wafer sizes by incorporating distinct holders for processing full wafers (2-8 inches) and/or small.\r\n g) Software: SEM Imaging Software, Alignment Software and CAD designing Software, which allows using and/or converting into industry standard GDSII and DXF file formats.\r\n It is believed the JEOL JBX-8100FS G3 Electron Beam Lithography System is the sole machine which complies with these requirements. Therefore, we deem competition is absent for technical reasons.",
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        "description": "The University has a requirement for an Electron Beam lithography system which has an acceleration voltage of at least 200 kV. It must be capable of the following:\r\n a) Ultra-fine line lithography: 3 nm linewidth, using commercially available resists. This can be obtained by its single-nm digit beam diameter.\r\n b) Ultra-high position accuracy: This can be obtained by a laser interferometer with \u00c3\u0085 (sub-1 nm) reading resolution, enabling a stitching accuracy of \u00c2\u00b18 nm and overlay accuracy of \u00c2\u00b18 nm.\r\n c) Uniform fine pattern writing over entire field: Uniform nm-scale lines can be drawn from edge to edge across a large field (\u00e2\u0089\u00a52000\u00ce\u00bcm) without the need for stitching. This guarantees better accuracy, eliminates the need for stage movement, and enhances writing speed and throughput.\r\n d) High throughput lithography: This will be enabled by a 125 MHz (or higher) high-speed deflection system coupled with a new electron beam column design.\r\n e) Wafer scale (\u0026 multi wafer) processing: Single cassette auto-loader supporting 8-inch wafers with a multi-cassette automatic sample loading system. Fast loading and pumping time.\r\n f) Flexibility in sample holders: Offer the ability to simultaneously handle a variety of wafer sizes by incorporating distinct holders for processing full wafers (2-8 inches) and/or small.\r\n g) Software: SEM Imaging Software, Alignment Software and CAD designing Software, which allows using and/or converting into industry standard GDSII and DXF file formats.\r\n It is believed the JEOL JBX-8100FS G3 Electron Beam Lithography System is the sole machine which complies with these requirements. Therefore, we deem competition is absent for technical reasons.",
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        "id": "MAR550684",
        "title": "EBeam Lithographer",
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        "description": "The University has a requirement for an Electron Beam lithography system which has an acceleration voltage of at least 200 kV. It must be capable of the following:\r\n a) Ultra-fine line lithography: 3 nm linewidth, using commercially available resists. This can be obtained by its single-nm digit beam diameter.\r\n b) Ultra-high position accuracy: This can be obtained by a laser interferometer with \u00c3\u0085 (sub-1 nm) reading resolution, enabling a stitching accuracy of \u00c2\u00b18 nm and overlay accuracy of \u00c2\u00b18 nm.\r\n c) Uniform fine pattern writing over entire field: Uniform nm-scale lines can be drawn from edge to edge across a large field (\u00e2\u0089\u00a52000\u00ce\u00bcm) without the need for stitching. This guarantees better accuracy, eliminates the need for stage movement, and enhances writing speed and throughput.\r\n d) High throughput lithography: This will be enabled by a 125 MHz (or higher) high-speed deflection system coupled with a new electron beam column design.\r\n e) Wafer scale (\u0026 multi wafer) processing: Single cassette auto-loader supporting 8-inch wafers with a multi-cassette automatic sample loading system. Fast loading and pumping time.\r\n f) Flexibility in sample holders: Offer the ability to simultaneously handle a variety of wafer sizes by incorporating distinct holders for processing full wafers (2-8 inches) and/or small.\r\n g) Software: SEM Imaging Software, Alignment Software and CAD designing Software, which allows using and/or converting into industry standard GDSII and DXF file formats.\r\n It is believed the JEOL JBX-8100FS G3 Electron Beam Lithography System is the sole machine which complies with these requirements. Therefore, we deem competition is absent for technical reasons.",
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    "procurementMethodRationale": "The University has a requirement for an Electron Beam lithography system which has an acceleration voltage of at least 200 kV. It must be capable of the following:\r\n a) Ultra-fine line lithography: 3 nm linewidth, using commercially available resists. This can be obtained by its single-nm digit beam diameter.\r\n b) Ultra-high position accuracy: This can be obtained by a laser interferometer with \u00c3\u0085 (sub-1 nm) reading resolution, enabling a stitching accuracy of \u00c2\u00b18 nm and overlay accuracy of \u00c2\u00b18 nm.\r\n c) Uniform fine pattern writing over entire field: Uniform nm-scale lines can be drawn from edge to edge across a large field (\u00e2\u0089\u00a52000\u00ce\u00bcm) without the need for stitching. This guarantees better accuracy, eliminates the need for stage movement, and enhances writing speed and throughput.\r\n d) High throughput lithography: This will be enabled by a 125 MHz (or higher) high-speed deflection system coupled with a new electron beam column design.\r\n e) Wafer scale (\u0026 multi wafer) processing: Single cassette auto-loader supporting 8-inch wafers with a multi-cassette automatic sample loading system. Fast loading and pumping time.\r\n f) Flexibility in sample holders: Offer the ability to simultaneously handle a variety of wafer sizes by incorporating distinct holders for processing full wafers (2-8 inches) and/or small.\r\n g) Software: SEM Imaging Software, Alignment Software and CAD designing Software, which allows using and/or converting into industry standard GDSII and DXF file formats.\r\n It is believed the JEOL JBX-8100FS G3 Electron Beam Lithography System is the sole machine which complies with these requirements. Therefore, we deem competition is absent for technical reasons.",
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    "status": "complete",
    "title": "EBeam Lithographer"
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